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MJE340 Plastic Medium-Power NPN Silicon Transistor
This device is useful for high-voltage general purpose applications.
Features
* Suitable for Transformerless, Line-Operated Equipment * Thermopad Construction Provides High Power Dissipation Rating * Pb-Free Package is Available*
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Emitter-Base Voltage Symbol VCEO VEB IC PD Value 300 3.0 Unit Vdc Vdc
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for High Reliability
0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATTS
I I II I IIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIII IIIIIIIII II II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII
III I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII II I I III I I III I I IIIIIIIIIIIIIIIIIII I III III IIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II
Collector Current - Continuous 500 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 20 0.16 W mW/_C _C TJ, Tstg -65 to +150
TO-225 CASE 77 STYLE 1 3 21
THERMAL CHARACTERISTICS
Characteristic
Symbol qJC
Max
Unit
Thermal Resistance, Junction-to-Case
6.25
_C/W
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
YWW JE340G
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Y WW JE340 G = Year = Work Week = Device Code = Pb-Free Package
Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) Collector Cutoff Current (VCB = 300 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
VCEO(sus)II 300 ICBO IEBO - -
-
Vdc
100 100
mAdc mAdc
ORDERING INFORMATION
Device MJE340 MJE340G Package TO-225 TO-225 (Pb-Free) Shipping 500 Units/Box 500 Units/Box
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
240
-
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
1
February, 2006 - Rev. 11
Publication Order Number: MJE340/D
MJE340
32 PD, POWER DISSIPATION (WATTS) 28 V, VOLTAGE (VOLTS) 24 20 16 12 8.0 4.0 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 0 10 20 MJE340 0.8 1.0 TJ = 25C VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5.0 30 50 100 200 IC, COLLECTOR CURRENT (mA) 300 500
Figure 1. Power Temperature Derating
Figure 2. "On" Voltages
ACTIVE-REGION SAFE OPERATING AREA
1.0 IC, COLLECTOR CURRENT (AMP) 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 10 20 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25C SINGLE PULSE 30 50 70 100 200 300 TJ = 150C dc 1.0 ms 10 ms 500 ms
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. MJE340
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2
MJE340
hFE , DC CURRENT GAIN, NORMALIZED 10 7.0 5.0 3.0 2.0 -55 C 1.0 0.7 0.5 0.3 0.2 0.1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 2.0 150C TJ = 25C VCE = 1.0 Vdc VOLTAGE (VOLTS) 1.6 1.2 TJ = 25C
0.8
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V
0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0
Figure 4. DC Current Gain
Figure 5. "On" Voltage
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 50 100 200 500 1000 qJC(t) = r(t) qJC qJC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk)
0.1 0.07 0.05 0.03 0.02
t1
t2
DUTY CYCLE, D = t1/t2
0.01 0.01
Figure 6. Thermal Response
300 200 hFE , DC CURRENT GAIN TJ = 150C +100C +25 C VCE = 10 V VCE = 2.0 V
100 70 50 30 20
-55 C
10
1.0
2.0
3.0
5.0
7.0
10
20 30 50 IC, COLLECTOR CURRENT (mAdc)
70
100
200
300
500
Figure 7. DC Current Gain
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3
MJE340
PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z
-B- U Q
F M
C
-A-
123
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M M
A
M
B
M
B
M
DIM A B C D F G H J K M Q R S U V
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
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4
MJE340/D

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